Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
MOSFET N-CH 800V 5A TO220FM Product overview: R8005ANX from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 800V, 5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800V, 5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-R8005ANX can be used for catalog matching and distributor lookup.
Manufacturer: Rohm Semiconductor
Win Source Part Number: 042291-R8005ANX
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 40W (Tc)
Family Name: R8005ANX
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220FM
Dimension: TO-220-2 Full Pack
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 5A (Tc)
Gate-Source Threshold Voltage: 5V @ 1mA
Max Gate Charge: 21nC @ 10V
Max Input Capacitance: 485pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 2.08 Ohm @ 2.5A, 10V
Alternative Parts (Cross-Reference): STP5NA80FP; STP4NC80ZFP; STP5NB80FP; IXFP4N85XM;
ECCN: EAR99
Estimated EOL Date: 2022
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Balance
N-Channel 800V 5A (Tc) 40W (Tc) Through Hole TO-220FM
MOSFET, N-CH, 800V, 5A, TO-220FM-3; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:800V; On Resistance Rds(on):1.6ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power DissipationRoHS Compliant: Yes
MOSFET N-CH 800V 5A TO220FM
| ROHM Semiconductor USA, LLC | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | R8005ANX | 278-R8005ANX | 042291-R8005ANX | R8005ANX-ND | 10AC9015 | R8005ANX | R8005ANX |
| Product Name | 10V Drive Nch MOSFET | 800V 5A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - R8005ANX | Single FETs, MOSFETs | Mosfet, N-Ch, 800V, 5A, To-220Fm-3; Transistor Polarity Rohm | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||
| V(BR)DSS | 800 volts | 800 volts | |||||
| IDSS | 5000 milliamps | 5000 milliamps | |||||
| PD | 40000 milliwatts | 51 milliwatts | 40000 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | 150 C (302 F) | 150 C (302 F) |
