Win Source Part Number: 980268-RD3S100AAFRAT
Category: Discrete Semiconductor Products>Transistors
Series: Automotive, AEC-Q101
Package: Tape & Reel
Standard Package: 2,500
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 190 V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 182mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 85W (Tc)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 73 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Rohm Semiconductor
Other Names: 846-RD3S100AAFRATLDK
Base Product Number: RD3S100
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
N-Channel 190V 10A (Tc) 85W (Tc) Surface Mount TO-252
N-Channel 190V 10A (Tc) 85W (Tc) Surface Mount TO-252
N-Channel 190V 10A (Tc) 85W (Tc) Surface Mount TO-252
MOSFET, N-CH, 190V, 10A, 150DEG C, 85W ROHS COMPLIANT: YES
MOSFET N-CH 190V 10A TO252
| Win Source Electronics | DigiKey | Newark, An Avnet Company | Acme Chip Technology Co., Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 980268-RD3S100AAFRATL | 846-RD3S100AAFRATLTR-ND | 29AK4617 | RD3S100AAFRATL |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Mosfet, N-Ch, 190V, 10A, 150Deg C, 85W Rohs Compliant Rohm | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | ||
| PD | 85000 milliwatts | |||
| TJ | 150 C (302 F) |