Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Manufacturer: Rohm Semiconductor
Win Source Part Number: 1241776-R8002ANX
Manufacturer Homepage: www.rohm.com
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Limited
N-Channel 800V 2A (Tc) 35W (Tc) Through Hole TO-220FM
MOSFET, N-CH, 800V, 2A, TO-220FM-3; Transistor Polarity:N Channel; Continuous Drain Current Id:2A; Drain Source Voltage Vds:800V; On Resistance Rds(on):3.3ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power DissipationRoHS Compliant: Yes
MOSFET N-CH 800V 2A TO-220FM
MOSFET N-CH 800V 2A TO220FM
| ROHM Semiconductor USA, LLC | Win Source Electronics | DigiKey | Newark, An Avnet Company | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | R8002ANX | 1241776-R8002ANX | R8002ANX-ND | 10AC9014 | 687-R8002ANX | R8002ANX | R8002ANX |
| Product Name | 10V Drive Nch MOSFET | TRANSISTORS - Transistors - FETs, MOSFETs - RF - R8002ANX | Single FETs, MOSFETs | Mosfet, N-Ch, 800V, 2A, To-220Fm-3; Transistor Polarity Rohm | MOSFET N-CH 800V 2A TO-220FM | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel | |||||
| V(BR)DSS | 800 volts | 800 volts | |||||
| IDSS | 2000 milliamps | 2000 milliamps | |||||
| PD | 35000 milliwatts | 35000 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | 150 C (302 F) |
