MOSFET N-CHANNEL 600V 76A TO247 Product overview: R6076MNZ1C9 from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600V, 76A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 76A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-R6076MNZ1C9 can be used for catalog matching and distributor lookup.
Manufacturer: Rohm Semiconductor
Win Source Part Number: 891114-R6076MNZ1C9
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 600 V 76A (Tc) 740W (Tc) Through Hole TO-247
Package: Tube
Package: TO-247-3
Mounting: Through Hole
Part Status: Obsolete
Categories: Discrete Semiconductor Products
Case / Package: TO-247
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Limited
Quantity per package: 450
MSL Level: 1 (Unlimited)
REACH Status: REACH Affected
HTSUS: 8541.29.0095
N-Channel 600V 76A (Tc) 740W (Tc) Through Hole TO-247
MOSFET N-CHANNEL 600V 76A TO247
MOSFET Nch 600V 76A TO-247 Pwr MOSFET
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-R6076MNZ1C9 | 891114-R6076MNZ1C9 | R6076MNZ1C9-ND | R6076MNZ1C9 | R6076MNZ1C9 |
| Product Name | N-Channel 600V 76A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - R6076MNZ1C9 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| MOSFET Operating Mode | Enhancement | ||||
| V(BR)DSS | 600 volts | ||||
| PD | 740000 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |