P-channel MOSFET with a drain-source voltage rating of -12V and a continuous drain current of ±4.5A, designed for low-voltage switching applications with a -1.5V gate drive. Packaged in the TSMT6 surface-mount format, it features a maximum on-resistance of 30mΩ at -4.5V gate-source voltage and includes a built-in gate-source protection diode. The device is RoHS compliant and operates from -55°C to 150°C junction temperature. It meets no specified industry standards beyond RoHS compliance.
MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market.
MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | RAQ045P01 | RAQ045P01 |
| Product Name | 1.5V Drive Pch MOSFET | 1.5V Drive Pch MOSFET |
| Polarity | P-Channel | P-Channel |
| V(BR)DSS | -12 volts | -12 volts |
| IDSS | -4500 milliamps | -4500 milliamps |
| PD | 1250 milliwatts | 1250 milliwatts |
