N-Channel 200V 5A (Tc) 850mW (Ta), 20W (Tc) Surface Mount CPT3
MOSFET N-CH 200V 5A CPT3 Product overview: RCD051N20TL from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-RCD051N20TL can be used for catalog matching and distributor lookup.
Manufacturer: Rohm Semiconductor
Win Source Part Number: 1091611-RCD051N20TL
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 850mW (Ta), 20W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: CPT3
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 5A (Tc)
Gate-Source Threshold Voltage: 5.25V @ 1mA
Max Gate Charge: 8.3nC @ 10V
Max Input Capacitance: 330pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 760 mOhm @ 2.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Balance
MOSFET, N-CH, 200V, 5A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.54ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5.25V; Power DissipationRoHS Compliant: Yes
MOSFET 10V Drive Nch Power MOSFET
MOSFET N-CH 200V 5A CPT3
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | RCD051N20TLTR-ND | 278-RCD051N20TL | 1091611-RCD051N20TL | 10AC8635 | RCD051N20TL | RCD051N20TL |
| Product Name | Single FETs, MOSFETs | 200V 5A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - RCD051N20TL | Mosfet, N-Ch, 200V, 5A, To-252; Transistor Polarity Rohm | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | |||
| Package Type | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | SOT3; TO-252 (DPAK); CPT3 | TO-3 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| MOSFET Operating Mode | Enhancement | |||||
| Transconductance | 0.0013 kS | |||||
| PD | 29 milliwatts | 850 to 20000 milliwatts |
