Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
MOSFET N-CH 200V 30A TO220FM
N-Channel 200V 30A (Tc) 2.23W (Ta), 40W (Tc) Through Hole TO-220FM
Manufacturer: Rohm Semiconductor
Win Source Part Number: 809986-RCX300N20
Packaging: Bulk
Mounting Style: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 200V
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: 150°C
Manufacturer Package: TO-220-3 Full Pack
Power Dissipation (Maximum): 2.23W , 40W (Tc)
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 500
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 80mOhm at 15A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 60nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 3200pF at 25V
Current - Continuous Drain (Id) at 25°C: 30A (Tc)
Vgs(th) (Maximum) at Id: 5V at 1mA
Maximum Vgs: ±30V
MOSFET N-CH 200V 30A TO220FM
| ROHM Semiconductor USA, LLC | ROHM Semiconductor GmbH | ODG (Origin Data Global) | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | RCX300N20 | RCX300N20 | RCX300N20 | RCX300N20-ND | 809986-RCX300N20 | RCX300N20 | RCX300N20 |
| Product Name | 10V Drive Nch MOSFET | 10V Drive Nch MOSFET | Single FETs, MOSFETs | Single FETs, MOSFETs | FETs - Single - RCX300N20 | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | ||
| V(BR)DSS | 200 volts | 200 volts | 200 volts | ||||
| IDSS | 30000 milliamps | 30000 milliamps | 30000 milliamps | ||||
| PD | 40000 milliwatts | 40000 milliwatts | 2230 milliwatts | 2230 to 40000 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | 150 C (302 F) | 150 C (302 F) |
