ROHM Semiconductor USA, LLC Single FETs, MOSFETs R6520ENXC7G

N-Channel 650V 20A (Ta) 68W (Tc) Through Hole TO-220FM

Win Source Part Number: 1315689-R6520ENXC7G
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Tube
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 205mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 630µA
Power Dissipation (Max): 68W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220FM
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 72 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Rohm Semiconductor
Drive Voltage (Max Rds On, Min Rds On): 10V

650V 20A TO-220FM, LOW-NOISE POW Product overview: R6520ENXC7G from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 20A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 20A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-R6520ENXC7G can be used for catalog matching and distributor lookup.