Manufacturer: Rohm Semiconductor
Win Source Part Number: 1091680-RDX100N60FU6
Packaging: Bulk
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 45W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220FM
Dimension: TO-220-2 Full Pack
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 10A (Ta)
Gate-Source Threshold Voltage: 4V @ 1mA
Max Gate Charge: 45nC @ 10V
Max Input Capacitance: 1600pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 650 mOhm @ 5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Balance
N-Channel 600V 10A (Ta) 45W (Tc) Through Hole TO-220FM
MOSFET N-CH 600V 10A TO220FM
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | 1091680-RDX100N60FU6 | RDX100N60FU6-ND | RDX100N60FU6 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - RDX100N60FU6 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | |
| V(BR)DSS | 600 volts | ||
| PD | 45000 milliwatts |
