Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
N-Channel 800V 8A (Ta) 50W (Tc) Through Hole TO-220FM
Manufacturer: Rohm Semiconductor
Win Source Part Number: 042292-R8008ANX
Packaging: Bulk
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 50W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220FM
Dimension: TO-220-2 Full Pack
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 8A (Ta)
Gate-Source Threshold Voltage: 5V @ 1mA
Max Gate Charge: 39nC @ 10V
Max Input Capacitance: 1080pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.03 Ohm @ 4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Limited
MOSFET N-CH 800V 8A TO220FM
| ROHM Semiconductor USA, LLC | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | R8008ANX | R8008ANX-ND | 042292-R8008ANX | R8008ANX | R8008ANX |
| Product Name | 10V Drive Nch MOSFET | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - R8008ANX | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | ||
| V(BR)DSS | 800 volts | 800 volts | |||
| IDSS | 8000 milliamps | ||||
| PD | 50000 milliwatts | 50000 milliwatts |
