ROHM Semiconductor USA, LLC MOSFET R6025FNZC8

N-channel 600V 25A power MOSFET in a TO-3PF package, with a maximum drain-source on-resistance of 0.18Ω at 25°C and a power dissipation rating of 150W. It features fast switching, gate-source voltage tolerance of ±30V, and is RoHS compliant with Pb-free lead plating. The device has a junction temperature range of -55°C to +150°C and is rated for single-pulse avalanche energy of 42.1mJ and repetitive avalanche energy of 9.7mJ. It meets the RoHS standard and is packaged in tube format with a basic ordering unit of 360 pcs.