MOSFET P-CH 12V 4A TUMT3
P-Channel 12V 4A (Ta) 800mW (Ta) Surface Mount TUMT3
P-Channel 12V 4A (Ta) 800mW (Ta) Surface Mount TUMT3
P-Channel 12V 4A (Ta) 800mW (Ta) Surface Mount TUMT3
MOSFET P-CH 12V 4A TUMT3 Product overview: RAF040P01TCL from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 4A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-RAF040P01TCL can be used for catalog matching and distributor lookup.
Manufacturer: Rohm Semiconductor
Win Source Part Number: 027091-RAF040P01TCL
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 800mW (Ta)
Family Name: RAF040P01
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TUMT3
Dimension: 3-SMD, Flat Leads
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 4A (Ta)
Gate-Source Threshold Voltage: 1V @ 1mA
Max Gate Charge: 37nC @ 4.5V
Max Input Capacitance: 4000pF @ 6V
Maximum Gate-Source Voltage: -8V
Maximum Rds On at Id,Vgs: 30 mOhm @ 4A, 4.5V
Alternative Parts (Cross-Reference): FDD306P_NL; FDD306P; DMP1045UFY4-7; RAF040P01TL;
Introduction Date: August 04, 2011
ECCN: EAR99
Estimated EOL Date: 2032
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Sufficient
MOSFET P-CH 12V 4A TUMT3
MOSFET P-CH 12V 4A TUMT3
MOSFET, P-CH, -12V, -4A, TUMT-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-4A; Drain Source Voltage Vds:-12V; On Resistance Rds(on):0.022ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-1V; Power RoHS Compliant: Yes
| ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | RAF040P01TCL | RAF040P01TCLDKR-ND | 278-RAF040P01TCL | 027091-RAF040P01TCL | RAF040P01TCL | 687-RAF040P01TCL | RAF040P01TCL | 10AC8623 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | 12V 4A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - RAF040P01TCL | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET P-CH 12V 4A TUMT3 | MOSFET | Mosfet, P-Ch, -12V, -4A, Tumt-3; Transistor Polarity Rohm |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel; P-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | SILICON | ||||||
| V(BR)DSS | 12 volts | 12 volts | -12 volts | |||||
| IDSS | 4000 milliamps | -4000 milliamps | ||||||
| PD | 800 milliwatts | 800 milliwatts | 800 milliwatts | 800 milliwatts |
