ROHM Semiconductor USA, LLC Single FETs, MOSFETs RF4E110BNTR

N-Channel 30V 11A (Ta) 2W (Ta) Surface Mount HUML2020L8

N-Channel 30V 11A (Ta) 2W (Ta) Surface Mount HUML2020L8

N-Channel 30V 11A (Ta) 2W (Ta) Surface Mount HUML2020L8

MOSFET N-CH 30V 11A HUML2020L8 Product overview: RF4E110BNTR from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 11A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 11A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-RF4E110BNTR can be used for catalog matching and distributor lookup.

Manufacturer: Rohm Semiconductor
Win Source Part Number: 1092113-RF4E110BNTR
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 6-HUML2020L8 (2x2)
Dimension: 8-PowerUDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 11A (Ta)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 24nC @ 10V
Max Input Capacitance: 1200pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 11.1 mOhm @ 11A, 10V
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Balance