The RF4E100AJ is an N-channel MOSFET with a maximum drain-source voltage (VDS) of 30V and a continuous drain current (ID) rating of ¬±10A. It features a low on-resistance of 12.4 mOc at a gate-source voltage (VGS) of 4.5V, making it suitable for applications requiring efficient power management. The device is housed in a compact HUML2020L8 package, which is designed for high power density. It is RoHS compliant and halogen-free, ensuring it meets environmental standards. The MOSFET has a maximum power dissipation of 2.0W and operates within a junction temperature range of -55¬8C to +150¬8C. It is suitable for various applications, including DC/DC converters and battery switches. The product is packaged in embossed tape for easy handling and assembly, with a minimum order quantity of 3000 pieces.
N-Channel 30V 10A (Ta) 2W (Tc) Surface Mount HUML2020L8
N-Channel 30V 10A (Ta) 2W (Tc) Surface Mount HUML2020L8
N-Channel 30V 10A (Ta) 2W (Tc) Surface Mount HUML2020L8
MOSFET, N-CH, 30V, 10A, HUML2020; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0094ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.5V; Power RoHS Compliant: Yes
MOSFET N-CH 30V 10A HUML2020L8
| DigiKey | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | RF4E100AJTCRTR-ND | RF4E100AJTCR | 10AC8655 | RF4E100AJTCR |
| Product Name | Single FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 30V, 10A, Huml2020; Transistor Polarity Rohm | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel |
