The RF4E070BN is a 30V N-channel MOSFET designed for applications requiring low on-resistance and high power handling capabilities. It features a maximum RDS(on) of 28.6 mOc at a gate-source voltage of 10V and 30.8 mOc at 4.5V, making it suitable for efficient switching applications. The device can handle continuous drain currents of ¬±7A and pulsed drain currents up to ¬±28A. It has a power dissipation rating of 2.0W and operates within a junction temperature range of -55¬8C to +150¬8C. The MOSFET is housed in a compact DFN2020-8S package, which is RoHS compliant and halogen-free. Additionally, it is 100% tested for gate charge and avalanche characteristics, ensuring reliability in various applications.
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | RF4E070BN | RF4E070BN |
| Product Name | 4.5V Drive Nch MOSFET | 4.5V Drive Nch MOSFET |
| Polarity | N-Channel | N-Channel |
| V(BR)DSS | 30 volts | 30 volts |
| IDSS | 7000 milliamps | 7000 milliamps |
| PD | 2000 milliwatts | 2000 milliwatts |
