ROHM Semiconductor USA, LLC Single FETs, MOSFETs RF4E080GNTR

Description
N-Channel 30V 8A (Ta) 2W (Ta) Surface Mount HUML2020L8
Request a Quote Datasheet
Description
N-Channel 30V 8A (Ta) 2W (Ta) Surface Mount HUML2020L8
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - RF4E080GNTRCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
RF4E080GNTRCT-ND
Single FETs, MOSFETs RF4E080GNTRCT-ND
N-Channel 30V 8A (Ta) 2W (Ta) Surface Mount HUML2020L8

N-Channel 30V 8A (Ta) 2W (Ta) Surface Mount HUML2020L8

Buy Now Datasheet
Single FETs, MOSFETs - RF4E080GNTRDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
RF4E080GNTRDKR-ND
Single FETs, MOSFETs RF4E080GNTRDKR-ND
N-Channel 30V 8A (Ta) 2W (Ta) Surface Mount HUML2020L8

N-Channel 30V 8A (Ta) 2W (Ta) Surface Mount HUML2020L8

Buy Now Datasheet
Single FETs, MOSFETs - RF4E080GNTRTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
RF4E080GNTRTR-ND
Single FETs, MOSFETs RF4E080GNTRTR-ND
N-Channel 30V 8A (Ta) 2W (Ta) Surface Mount HUML2020L8

N-Channel 30V 8A (Ta) 2W (Ta) Surface Mount HUML2020L8

Buy Now Datasheet
FETs - Single - RF4E080GNTR - 800676-RF4E080GNTR - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - RF4E080GNTR
800676-RF4E080GNTR
FETs - Single - RF4E080GNTR 800676-RF4E080GNTR
Manufacturer: Rohm Semiconductor Win Source Part Number: 800676-RF4E080GNTR Packaging: Reel Mounting Style: SMD Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 30V Supplier Device Package: HUML2020L8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Temperature Range - Operating: 150°C Manufacturer Package: 8-PowerUDFN Power Dissipation (Maximum): 2W Popularity: High Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Sufficient Manufacturer Pack Quantity: 3,000 MSL Level: 1 (Unlimited) Rds On (Maximum) at Id, Vgs: 17.6mOhm at 8A, 10V Gate Charge (Qg) (Maximum) at Vgs: 5.8nC at 10V Input Capacitance (Ciss) (Maximum) at Vds: 295pF at 15V Current - Continuous Drain (Id) at 25°C: 8A Vgs(th) (Maximum) at Id: 2.5V at 250μA Maximum Vgs: ±20V

Manufacturer: Rohm Semiconductor
Win Source Part Number: 800676-RF4E080GNTR
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 30V
Supplier Device Package: HUML2020L8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Temperature Range - Operating: 150°C
Manufacturer Package: 8-PowerUDFN
Power Dissipation (Maximum): 2W
Popularity: High
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Sufficient
Manufacturer Pack Quantity: 3,000
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 17.6mOhm at 8A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 5.8nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 295pF at 15V
Current - Continuous Drain (Id) at 25°C: 8A
Vgs(th) (Maximum) at Id: 2.5V at 250μA
Maximum Vgs: ±20V

Buy Now
Singapore
30V 8A MOSFET Transistor
278-RF4E080GNTR
30V 8A MOSFET Transistor 278-RF4E080GNTR
MOSFET N-CH 30V 8A HUML2020L8 Product overview: RF4E080GNTR from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-RF4E080GNTR can be used for catalog matching and distributor lookup.

MOSFET N-CH 30V 8A HUML2020L8 Product overview: RF4E080GNTR from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-RF4E080GNTR can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF4E080GNTR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
RF4E080GNTR
Discrete Semiconductor Products - Transistors - FETs, MOSFETs RF4E080GNTR
MOSFET N-CH 30V 8A HUML2020L8

MOSFET N-CH 30V 8A HUML2020L8

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 4.5V Drive Nch MOSFET

MOSFET 4.5V Drive Nch MOSFET

Buy Now Datasheet

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number RF4E080GNTRCT-ND 800676-RF4E080GNTR 278-RF4E080GNTR RF4E080GNTR RF4E080GNTR
Product Name Single FETs, MOSFETs FETs - Single - RF4E080GNTR 30V 8A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel N-Channel
Package Type 8-PowerUDFN SOT3 Tape & Reel (TR) 8-PowerUDFN
PD 2000 milliwatts 2 milliwatts
TJ 150 C (302 F) 150 C (302 F)
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