ROHM Semiconductor USA, LLC 30V 8A MOSFET Transistor RF4E080GNTR

MOSFET N-CH 30V 8A HUML2020L8 Product overview: RF4E080GNTR from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-RF4E080GNTR can be used for catalog matching and distributor lookup.

N-Channel 30V 8A (Ta) 2W (Ta) Surface Mount HUML2020L8

N-Channel 30V 8A (Ta) 2W (Ta) Surface Mount HUML2020L8

N-Channel 30V 8A (Ta) 2W (Ta) Surface Mount HUML2020L8

Manufacturer: Rohm Semiconductor
Win Source Part Number: 800676-RF4E080GNTR
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 30V
Supplier Device Package: HUML2020L8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Temperature Range - Operating: 150°C
Manufacturer Package: 8-PowerUDFN
Power Dissipation (Maximum): 2W
Popularity: High
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Sufficient
Manufacturer Pack Quantity: 3,000
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 17.6mOhm at 8A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 5.8nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 295pF at 15V
Current - Continuous Drain (Id) at 25°C: 8A
Vgs(th) (Maximum) at Id: 2.5V at 250μA
Maximum Vgs: ±20V