N-Channel 30V 8A (Ta) 2W (Ta) Surface Mount HUML2020L8
N-Channel 30V 8A (Ta) 2W (Ta) Surface Mount HUML2020L8
N-Channel 30V 8A (Ta) 2W (Ta) Surface Mount HUML2020L8
Manufacturer: Rohm Semiconductor
Win Source Part Number: 800676-RF4E080GNTR
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 30V
Supplier Device Package: HUML2020L8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Temperature Range - Operating: 150°C
Manufacturer Package: 8-PowerUDFN
Power Dissipation (Maximum): 2W
Popularity: High
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Sufficient
Manufacturer Pack Quantity: 3,000
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 17.6mOhm at 8A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 5.8nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 295pF at 15V
Current - Continuous Drain (Id) at 25°C: 8A
Vgs(th) (Maximum) at Id: 2.5V at 250μA
Maximum Vgs: ±20V
MOSFET N-CH 30V 8A HUML2020L8
| DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | RF4E080GNTRCT-ND | 800676-RF4E080GNTR | RF4E080GNTR | RF4E080GNTR |
| Product Name | Single FETs, MOSFETs | FETs - Single - RF4E080GNTR | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel |
