ROHM Semiconductor USA, LLC TRANSISTORS - Transistors - FETs, MOSFETs - RF - RCD100N20TL RCD100N20TL

Manufacturer: Rohm Semiconductor
Win Source Part Number: 1091612-RCD100N20TL
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 850mW (Ta), 20W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: CPT3
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 10A (Tc)
Gate-Source Threshold Voltage: 5.25V @ 1mA
Max Gate Charge: 25nC @ 10V
Max Input Capacitance: 1400pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 182 mOhm @ 5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Balance

N-Channel 200V 10A (Tc) 850mW (Ta), 20W (Tc) Surface Mount CPT3

MOSFET N-CH 200V 10A CPT3 Product overview: RCD100N20TL from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 10A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 10A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-RCD100N20TL can be used for catalog matching and distributor lookup.