MOSFET N-CH 30V 7A HUML2020L8 Product overview: RF4E070BNTR from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-RF4E070BNTR can be used for catalog matching and distributor lookup.
Manufacturer: Rohm Semiconductor
Win Source Part Number: 1092111-RF4E070BNTR
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 6-HUML2020L8 (2x2)
Dimension: 8-PowerUDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 7A (Ta)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 8.9nC @ 10V
Max Input Capacitance: 410pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 28.6 mOhm @ 7A, 10V
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Balance
N-Channel 30V 7A (Ta) 2W (Ta) Surface Mount HUML2020L8
N-Channel 30V 7A (Ta) 2W (Ta) Surface Mount HUML2020L8
MOSFET N-CH 30V 7A HUML2020L8
MOSFET N-CH 30V 7A 8-HUML
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-RF4E070BNTR | 1092111-RF4E070BNTR | RF4E070BNTRTR-ND | RF4E070BNTR | 687-RF4E070BNTR | RF4E070BNTR |
| Product Name | 30V 7A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - RF4E070BNTR | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET N-CH 30V 7A 8-HUML | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | |||
| MOSFET Operating Mode | Enhancement | Enhancement; ENHANCEMENT MODE | ||||
| Transconductance | 0.0040 kS | |||||
| PD | 2 milliwatts | 2000 milliwatts | 2000 milliwatts | |||
| TJ | 150 C (302 F) | 150 C (302 F) | 150 C (302 F) |