ROHM Semiconductor USA, LLC 600V 30A MOSFET Transistor R6030KNZ4C13

MOSFET N-CH 600V 30A TO247 Product overview: R6030KNZ4C13 from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 30A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 30A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-R6030KNZ4C13 can be used for catalog matching and distributor lookup.

N-Channel 600V 30A (Tc) 305W (Tc) Through Hole TO-247

Win Source Part Number: 1355203-R6030KNZ4C13
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Temperature Range - Operating: 150°C (TJ)
Fake Threat In the Open Market: 35 pct.
MSL Level: 1 (Unlimited)
Mfr: Rohm Semiconductor
Package: Tube
Product Status: Active
Package / Case: TO-247-3
Supplier Device Package: TO-247
Base Product Number: R6030
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
Power Dissipation (Max): 305W (Tc)
Mounting Type: Through Hole
HTSUS: 8541.29.0095
REACH Status: REACH Unaffected
ECCN: EAR99