Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
N-Channel 250V 8A (Tc) 2.23W (Ta), 35W (Tc) Through Hole TO-220FM
MOSFET N-CH 250V 8A TO220FM Product overview: RCX080N25 from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 250V, 8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 250V, 8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-RCX080N25 can be used for catalog matching and distributor lookup.
MOSFET N-CH 250V 8A TO220FM
| ROHM Semiconductor USA, LLC | ROHM Semiconductor GmbH | DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | RCX080N25 | RCX080N25 | RCX080N25-ND | 278-RCX080N25 | RCX080N25 | RCX080N25 |
| Product Name | 10V Drive Nch MOSFET | 10V Drive Nch MOSFET | Single FETs, MOSFETs | 250V 8A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | ||
| V(BR)DSS | 250 volts | 250 volts | ||||
| IDSS | 8000 milliamps | 8000 milliamps | ||||
| PD | 35000 milliwatts | 35000 milliwatts | 35 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | 150 C (302 F) |
