Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
N-Channel 250V 8A (Tc) 2.23W (Ta), 35W (Tc) Through Hole TO-220FM
MOSFET N-CH 250V 8A TO220FM
| ROHM Semiconductor USA, LLC | ROHM Semiconductor GmbH | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | RCX080N25 | RCX080N25 | RCX080N25-ND | RCX080N25 | RCX080N25 |
| Product Name | 10V Drive Nch MOSFET | 10V Drive Nch MOSFET | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel | ||
| V(BR)DSS | 250 volts | 250 volts | |||
| IDSS | 8000 milliamps | 8000 milliamps | |||
| PD | 35000 milliwatts | 35000 milliwatts |