ROHM Semiconductor USA, LLC 250V 8A MOSFET Transistor RDN080N25

Description
MOSFET N-CH 250V 8A TO220FN Product overview: RDN080N25 from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 250V, 8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 250V, 8A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-RDN080N25 can be used for catalog matching and distributor lookup.
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Description
MOSFET N-CH 250V 8A TO220FN Product overview: RDN080N25 from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 250V, 8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 250V, 8A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-RDN080N25 can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
Description
Supplier Links
Singapore
250V 8A MOSFET Transistor
285-RDN080N25
250V 8A MOSFET Transistor 285-RDN080N25
MOSFET N-CH 250V 8A TO220FN Product overview: RDN080N25 from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 250V, 8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 250V, 8A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-RDN080N25 can be used for catalog matching and distributor lookup.

MOSFET N-CH 250V 8A TO220FN Product overview: RDN080N25 from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 250V, 8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 250V, 8A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-RDN080N25 can be used for catalog matching and distributor lookup.

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - RDN080N25 - 046146-RDN080N25 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - RDN080N25
046146-RDN080N25
TRANSISTORS - Transistors - FETs, MOSFETs - RF - RDN080N25 046146-RDN080N25
Manufacturer: Rohm Semiconductor Win Source Part Number: 046146-RDN080N25 Packaging: Bulk Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 35W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220FN Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 250V Continuous Drain Current at 25°C: 8A (Ta) Gate-Source Threshold Voltage: 4V @ 1mA Max Gate Charge: 30nC @ 10V Max Input Capacitance: 543pF @ 10V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 500 mOhm @ 4A, 10V Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Limited

Manufacturer: Rohm Semiconductor
Win Source Part Number: 046146-RDN080N25
Packaging: Bulk
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 35W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220FN
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 250V
Continuous Drain Current at 25°C: 8A (Ta)
Gate-Source Threshold Voltage: 4V @ 1mA
Max Gate Charge: 30nC @ 10V
Max Input Capacitance: 543pF @ 10V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 500 mOhm @ 4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Limited

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Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 285-RDN080N25 046146-RDN080N25
Product Name 250V 8A MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - RDN080N25
Polarity N-Channel N-Channel; N-Channel
PD 35000 milliwatts 35000 milliwatts
TJ 150 C (302 F) 150 C (302 F)
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