ROHM Semiconductor USA, LLC TRANSISTORS - Transistors - FETs, MOSFETs - RF - RDN080N25 RDN080N25

Manufacturer: Rohm Semiconductor
Win Source Part Number: 046146-RDN080N25
Packaging: Bulk
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 35W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220FN
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 250V
Continuous Drain Current at 25°C: 8A (Ta)
Gate-Source Threshold Voltage: 4V @ 1mA
Max Gate Charge: 30nC @ 10V
Max Input Capacitance: 543pF @ 10V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 500 mOhm @ 4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Limited

MOSFET N-CH 250V 8A TO220FN Product overview: RDN080N25 from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 250V, 8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 250V, 8A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-RDN080N25 can be used for catalog matching and distributor lookup.