MOSFET N-CH 50V 200MA EMT3F Product overview: RE1J002YNTCL from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 200MA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 50V, 200MA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-RE1J002YNTCL can be used for catalog matching and distributor lookup.
Manufacturer: Rohm Semiconductor
Win Source Part Number: 793073-RE1J002YNTCL
Packaging: Reel package
Operating Temperature Range: 150°C (TJ)
Package: SC-89, SOT-490
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Family Name: RE1J002YN
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 0.9V, 4.5V
Manufacturer Package: EMT3F (SOT-416FL)
Channel Type Type: N
Drain Source Voltage: 50V
Vgs(th) (Maximum) @ Id: 800mV @ 1mA
Input Capacitance (Ciss) (Maximum) @ Vds: 26pF @ 10V
Vgs (Maximum): ±8V
Power Dissipation (Maximum): 150mW (Ta)
Rds On (Maximum) @ Id, Vgs: 2.2 Ohm @ 200mA, 4.5V
Alternative Parts (Cross-Reference): PJE138K_R1_00001; DMN5L06T-7; DMN55D0UT-7; DMN5L06T;
ECCN: EAR99
Estimated EOL Date: 2031
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Limited
N-Channel 50V 200mA (Ta) 150mW (Ta) Surface Mount EMT3F (SOT-416FL)
N-Channel 50V 200mA (Ta) 150mW (Ta) Surface Mount EMT3F (SOT-416FL)
N-Channel 50V 200mA (Ta) 150mW (Ta) Surface Mount EMT3F (SOT-416FL)
MOSFET N-CH 50V 200MA EMT3F
MOSFET Small Signal MOSFET N-CH .9V Drive .2A
MOSFET N-CH 50V 200MA EMT3F
MOSFET, N-CH, 50V, 0.2A, SC-89-3; Transistor Polarity:N Channel; Continuous Drain Current Id:200mA; Drain Source Voltage Vds:50V; On Resistance Rds(on):1.6ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:800mV; Power RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-RE1J002YNTCL | 793073-RE1J002YNTCL | RE1J002YNTCLTR-ND | RE1J002YNTCL | RE1J002YNTCL | RE1J002YNTCL | 10AC8653 |
| Product Name | 50V 200MA MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - RE1J002YNTCL | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 50V, 0.2A, Sc-89-3; Transistor Polarity Rohm |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| MOSFET Operating Mode | Enhancement | ||||||
| Transconductance | 2.00E-4 kS | ||||||
| PD | 150 milliwatts | 150 milliwatts | 150 milliwatts | ||||
| TJ | 150 C (302 F) | 150 C (302 F) | 150 C (302 F) |
