ROHM Semiconductor GmbH Nch 250V 51A Power MOSFET RCJ510N25

Description
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Description
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Datasheet
Datasheet Summary
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The RCJ510N25 is an N-channel 250V MOSFET designed for switching power supplies and automotive motor and solenoid drives. It is housed in the SC-83 package with dimensions of 9.80-10.40 mm in length and 8.80-9.20 mm in width. The device has a maximum drain-source voltage of 250V, a continuous drain current of 51A at 25°C, and a maximum on-resistance of 65mΩ at 25°C. It is 100% avalanche tested, rated for a junction temperature of 150°C, and complies with RoHS standards. Thermal resistance from junction to case is 0.41°C/W. Gate charge is 120nC, and the body diode has a forward voltage of 1.5V at 51A.

Datasheet Summary
Powered by GS/AI

The RCJ510N25 is an N-channel 250V MOSFET designed for switching power supplies and automotive motor and solenoid drives. It is housed in the SC-83 package with dimensions of 9.80-10.40 mm in length and 8.80-9.20 mm in width. The device has a maximum drain-source voltage of 250V, a continuous drain current of 51A at 25°C, and a maximum on-resistance of 65mΩ at 25°C. It is 100% avalanche tested, rated for a junction temperature of 150°C, and complies with RoHS standards. Thermal resistance from junction to case is 0.41°C/W. Gate charge is 120nC, and the body diode has a forward voltage of 1.5V at 51A.

Suppliers

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Nch 250V 51A Power MOSFET - RCJ510N25 - ROHM Semiconductor GmbH
Willich, Germany
Nch 250V 51A Power MOSFET
RCJ510N25
Nch 250V 51A Power MOSFET RCJ510N25
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

Supplier's Site Datasheet
10V Drive Nch MOSFET - RCJ510N25 - ROHM Semiconductor USA, LLC
Santa Clara, CA, USA
10V Drive Nch MOSFET
RCJ510N25
10V Drive Nch MOSFET RCJ510N25
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

Supplier's Site Datasheet

Technical Specifications

  ROHM Semiconductor GmbH ROHM Semiconductor USA, LLC
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET)
Product Number RCJ510N25 RCJ510N25
Product Name Nch 250V 51A Power MOSFET 10V Drive Nch MOSFET
Polarity N-Channel N-Channel
V(BR)DSS 250 volts 250 volts
IDSS 51000 milliamps 51000 milliamps
QG 120 nC
PD 40000 milliwatts 40000 milliwatts
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