The 1314681-R6515ENXC7G is a N-channel MOSFET designed for power applications, featuring a maximum drain-to-source voltage (Vdss) of 650V and a continuous drain current rating of ¬±15A at 25¬8C. It has a low on-resistance of 0.315Oc at a gate-source voltage (Vgs) of 10V and a drain current of 6.5A, which contributes to efficient power management. The device supports a maximum power dissipation of 60W and operates within a junction temperature range of -55¬8C to +150¬8C. This MOSFET is suitable for applications requiring fast switching and can be easily paralleled for increased current handling. It is packaged in a TO-220FM case and is compliant with RoHS standards, featuring Pb-free plating. The gate charge is rated at a maximum of 40 nC at 10V, with an input capacitance of 910 pF at 25V, making it suitable for various electronic designs.
650V 15A TO-220FM, LOW-NOISE POW Product overview: R6515ENXC7G from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 15A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 15A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-R6515ENXC7G can be used for catalog matching and distributor lookup.
Win Source Part Number: 1314681-R6515ENXC7G
Category: Discrete Semiconductor Products>Transistors
Package: Tube
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 315mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 430µA
Power Dissipation (Max): 60W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220FM
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 54 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Rohm Semiconductor
Drive Voltage (Max Rds On, Min Rds On): 10V
N-Channel 650V 15A (Ta) 60W (Tc) Through Hole TO-220FM
MOSFET SINGLE, 15A, 650V, 60W ROHS COMPLIANT: YES
650V 15A TO-220FM, LOW-NOISE POW
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Newark, An Avnet Company | Acme Chip Technology Co., Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-R6515ENXC7G | 1314681-R6515ENXC7G | 846-R6515ENXC7G-ND | 74AJ1412 | R6515ENXC7G |
| Product Name | 650V 15A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Mosfet Single, 15A, 650V, 60W Rohs Compliant Rohm | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | ||
| MOSFET Operating Mode | Enhancement | ||||
| PD | 60 milliwatts |
