Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Manufacturer: Rohm Semiconductor
Win Source Part Number: 1325268-RCX120N25
Category: Discrete Semiconductor Products>Transistors
Packaging: Bulk
Standard Package: 500
Mounting: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 250 V
Current - Continuous Drain (Id) @ 25°C: 12A
Power Dissipation (Max): 2.23W, 40W (Tc)
Supplier Device Package: TO-220FM
Vgs (Max): ±30V
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220-3 Full Pack
ECCN: EAR99
Fake Threat In the Open Market: 77
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Base Product Number: RCX120
Drive Voltage (Max Rds On, Min Rds On): 10V
RoHS Status: ROHS3 Compliant
N-Channel 250V 12A (Ta) 2.23W (Ta), 40W (Tc) Through Hole TO-220FM
MOSFET N-CH 250V 12A TO220FM Product overview: RCX120N25 from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 250V, 12A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 250V, 12A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-RCX120N25 can be used for catalog matching and distributor lookup.
MOSFET, N-CH, 250V, 12A, TO-220FM-3; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:250V; On Resistance Rds(on):0.18ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power RoHS Compliant: Yes
MOSFET N-CH 250V 12A TO-220FM
MOSFET N-CH 250V 12A TO220FM
| ROHM Semiconductor USA, LLC | ROHM Semiconductor GmbH | Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | RCX120N25 | RCX120N25 | 1325268-RCX120N25 | RCX120N25-ND | 278-RCX120N25 | RCX120N25 | 10AC8640 | 687-RCX120N25 | RCX120N25 |
| Product Name | 10V Drive Nch MOSFET | 10V Drive Nch MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | 250V 12A MOSFET Transistor | MOSFET | Mosfet, N-Ch, 250V, 12A, To-220Fm-3; Transistor Polarity Rohm | MOSFET N-CH 250V 12A TO-220FM | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | ||||
| V(BR)DSS | 250 volts | 250 volts | 250 volts | ||||||
| IDSS | 12000 milliamps | 12000 milliamps | 12000 milliamps | ||||||
| PD | 40000 milliwatts | 40000 milliwatts | 2230 to 40000 milliwatts | 40 milliwatts | 40000 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | 150 C (302 F) | 150 C (302 F) | 150 C (302 F) |
