RAL025P01 is a P-channel MOSFET designed for low-voltage switching applications, featuring a -12 V drain-source voltage rating and a continuous drain current of ±2.5 A. It is packaged in a TUMT6 surface-mount package and operates with a -1.5 V gate drive. The device has a maximum on-state resistance of 62 mΩ at -4.5 V gate-source voltage and includes a built-in gate-source protection diode. It is RoHS compliant and rated for a junction temperature range of -55 °C to +150 °C.
MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobile equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market.
MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | RAL025P01 | RAL025P01 |
| Product Name | 1.5V Drive Pch MOSFET | 1.5V Drive Pch MOSFET |
| Polarity | P-Channel | P-Channel |
| V(BR)DSS | -12 volts | -12 volts |
| IDSS | -2500 milliamps | -2500 milliamps |
| PD | 1000 milliwatts | 1000 milliwatts |
