Manufacturer: Rohm Semiconductor
Win Source Part Number: 891550-RDN080N25FU6
Operating Temperature Range: 150°C (TJ)
Features: N-Channel 250 V 8A (Ta) 35W (Tc) Through Hole TO-220FN
Package: Bulk
Package: TO-220-3 Full Pack
Mounting: Through Hole
Part Status: Obsolete
Categories: Discrete Semiconductor Products
Case / Package: TO-220FN
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Limited
Quantity per package: 500
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
N-Channel 250V 8A (Ta) 35W (Tc) Through Hole TO-220FN
MOSFET N-CH 250V 8A TO220FN Product overview: RDN080N25FU6 from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 250V, 8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 250V, 8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-RDN080N25FU6 can be used for catalog matching and distributor lookup.
MOSFET N-CH 250V 8A TO220FN
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 891550-RDN080N25FU6 | RDN080N25FU6-ND | 278-RDN080N25FU6 | RDN080N25FU6 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - RDN080N25FU6 | Single FETs, MOSFETs | 250V 8A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel |