ROHM Semiconductor GmbH 1.2V Drive Nch MOSFET RE1C002UN

Description
MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobile equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market.
Datasheet
Description
MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobile equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market.
Datasheet

Suppliers

Company
Product
Description
Supplier Links
1.2V Drive Nch MOSFET - RE1C002UN - ROHM Semiconductor GmbH
Willich, Germany
1.2V Drive Nch MOSFET
RE1C002UN
1.2V Drive Nch MOSFET RE1C002UN
MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobile equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market.

MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobile equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market.

Supplier's Site Datasheet
1.2V Drive Nch MOSFET - RE1C002UN - ROHM Semiconductor USA, LLC
Santa Clara, CA, USA
1.2V Drive Nch MOSFET
RE1C002UN
1.2V Drive Nch MOSFET RE1C002UN
MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market.

MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market.

Supplier's Site Datasheet

Technical Specifications

  ROHM Semiconductor GmbH ROHM Semiconductor USA, LLC
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number RE1C002UN RE1C002UN
Product Name 1.2V Drive Nch MOSFET 1.2V Drive Nch MOSFET
Polarity N-Channel N-Channel
V(BR)DSS 20 volts 20 volts
IDSS 200 milliamps 200 milliamps
PD 150 milliwatts 150 milliwatts
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