The RE1C002UN is an N-channel MOSFET designed for low-voltage switching in portable equipment, with a 20 V drain-source voltage rating and a continuous drain current of ±200 mA. It features a maximum on-state resistance of 1.2 Ω at 1.2 V gate drive and includes a built-in gate-source protection diode. The device is packaged in the SOT-416FL format and dissipates up to 150 mW with a junction temperature range of -55°C to +150°C. It meets RoHS standards and is supplied in tape and reel packaging with a reel size of 180 mm and a basic ordering unit of 3000 pieces.
MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobile equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market.
MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | RE1C002UN | RE1C002UN |
| Product Name | 1.2V Drive Nch MOSFET | 1.2V Drive Nch MOSFET |
| Polarity | N-Channel | N-Channel |
| V(BR)DSS | 20 volts | 20 volts |
| IDSS | 200 milliamps | 200 milliamps |
| PD | 150 milliwatts | 150 milliwatts |
