RCJ100N25 is an N-channel 250 V power MOSFET designed for switching power supplies and automotive motor and solenoid drives. It is packaged in an SC-83 case with a maximum power dissipation of 85 W at 25 °C junction temperature. The device has a maximum on-resistance of 320 mΩ at 10 V gate-source voltage and 25 °C junction temperature, and supports a continuous drain current of 10 A at 25 °C or 5.4 A at 100 °C. It is 100% avalanche-tested with a single-pulse avalanche energy of 7.29 mJ and avalanche current of 5.0 A. The part is RoHS compliant and features fast switching characteristics.
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | RCJ100N25 | RCJ100N25 |
| Product Name | Nch 250V 10A Power MOSFET | 10V Drive Nch MOSFET |
| Polarity | N-Channel | N-Channel |
| V(BR)DSS | 250 volts | 250 volts |
| IDSS | 10000 milliamps | 10000 milliamps |
| QG | 26.5 nC | |
| PD | 40000 milliwatts | 40000 milliwatts |
