The RAL035P01 is a P-channel MOSFET for switching applications, housed in the SOT-363T package with a maximum drain-source voltage of -12V and continuous drain current of ±3.5A. It features a maximum on-resistance of 42mΩ at -4.5V gate-source voltage and operates with a 1.5V gate drive. Power dissipation is rated at 1.0W, with a junction temperature range of -55°C to +150°C. The device meets RoHS standards.
MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobile equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market.
MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | RAL035P01 | RAL035P01 |
| Product Name | 1.5V Drive Pch MOSFET | 1.5V Drive Pch MOSFET |
| Polarity | P-Channel | P-Channel |
| V(BR)DSS | -12 volts | -12 volts |
| IDSS | -3500 milliamps | -3500 milliamps |
| PD | 1000 milliwatts | 1000 milliwatts |
