P-Channel 30V 7.5A (Ta) 2W (Ta) Surface Mount HUML2020L8
P-Channel 30V 7.5A (Ta) 2W (Ta) Surface Mount HUML2020L8
P-Channel 30V 7.5A (Ta) 2W (Ta) Surface Mount HUML2020L8
MOSFET P-CH 30V 7.5A HUML2020L8
Manufacturer: Rohm Semiconductor
Win Source Part Number: 793172-RF4E075ATTCR
Packaging: Reel package
Operating Temperature Range: 150°C (TJ)
Package: 8-PowerUDFN
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Family Name: RF4E075AT
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Manufacturer Package: 6-HUML2020L8 (2x2)
Channel Type Type: P
Drain Source Voltage: 30V
Vgs(th) (Maximum) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Maximum) @ Vgs: 22nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 1000pF @ 15V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 2W (Ta)
Rds On (Maximum) @ Id, Vgs: 21.7 mOhm @ 7.5A, 10V
Alternative Parts (Cross-Reference): RF4E075ATTCR1;
Introduction Date: February 20, 2015
ECCN: EAR99
Estimated EOL Date: 2035
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Balance
MOSFET Pch -30V -7.5A Middle Power MOSFET
MOSFET P-CH 30V 7.5A HUML2020L8
| DigiKey | ODG (Origin Data Global) | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | RF4E075ATTCRTR-ND | RF4E075ATTCR | 793172-RF4E075ATTCR | RF4E075ATTCR | RF4E075ATTCR |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - RF4E075ATTCR | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | P-Channel; P-Channel | |||
| Package Type | 8-PowerUDFN | 8-PowerUDFN | SOT3 | Surface Mount | |
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||
| V(BR)DSS | 30 volts |