The R6035ENZ is an N-channel 600V 35A Power MOSFET in a TO-3PF package, designed for switching applications. It has a maximum on-resistance of 0.102 Ω at 25°C, a continuous drain current of ±35 A at 25°C, and a power dissipation of 120 W. The gate-source voltage is rated at ±20 V, and the device is RoHS compliant. The junction temperature range is -55°C to +150°C, with a thermal resistance from junction to case of 1.04 °C/W and from junction to ambient of 40 °C/W. Avalanche energy for a single pulse is 796 mJ, and the device supports repetitive avalanche operations with 1.2 mJ. The packaging is supplied in a tube of 300 pieces.
R6035ENZ is a power MOSFET with low ON-resistance and fast switching, suitable for the switching application.
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | R6035ENZ | R6035ENZ |
| Product Name | 600V 35A TO-3PF, Low-noise Power MOSFET | 10V Drive Nch MOSFET |
| Polarity | N-Channel | N-Channel |
| V(BR)DSS | 600 volts | 600 volts |
| IDSS | 35000 milliamps | 35000 milliamps |
| QG | 110 nC | |
| PD | 120000 milliwatts | 120000 milliwatts |
