The RF4E070GN is an N-channel 30V MOSFET designed for switching applications, housed in a DFN2020-8S package measuring 2.0mm x 2.0mm. It has a maximum continuous drain current of ±7A and a maximum on-resistance of 21.4mΩ at 10V gate drive. The device is RoHS compliant and halogen free, with a power dissipation rating of 2.0W and a junction operating temperature range of -55°C to +150°C. It is 100% Rg and UIS tested, and features a thermal resistance from junction to ambient of 62.5°C/W when mounted on a 40×40×0.8mm copper board.
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | RF4E070GN | RF4E070GN |
| Product Name | 4.5V Drive Nch MOSFET | 4.5V Drive Nch MOSFET |
| Polarity | N-Channel | N-Channel |
| V(BR)DSS | 30 volts | 30 volts |
| IDSS | 7000 milliamps | 7000 milliamps |
| PD | 2000 milliwatts | 2000 milliwatts |
