ROHM Semiconductor USA, LLC Single FETs, MOSFETs R6046ANZ1C9

Description
N-Channel 600V 46A (Tc) 120W (Tc) Through Hole TO-247
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Description
N-Channel 600V 46A (Tc) 120W (Tc) Through Hole TO-247
Request a Quote Datasheet

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Product
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Single FETs, MOSFETs - R6046ANZ1C9-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
R6046ANZ1C9-ND
Single FETs, MOSFETs R6046ANZ1C9-ND
N-Channel 600V 46A (Tc) 120W (Tc) Through Hole TO-247

N-Channel 600V 46A (Tc) 120W (Tc) Through Hole TO-247

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - R6046ANZ1C9 - 793007-R6046ANZ1C9 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - R6046ANZ1C9
793007-R6046ANZ1C9
TRANSISTORS - Transistors - FETs, MOSFETs - RF - R6046ANZ1C9 793007-R6046ANZ1C9
Manufacturer: Rohm Semiconductor Win Source Part Number: 793007-R6046ANZ1C9 Packaging: Bulk Mounting Style: Through Hole Operating Temperature Range: 150°C (TJ) Package: TO-247-3 Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Family Name: R6046ANZ1 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: TO-247 Channel Type Type: N Drain Source Voltage: 600V Vgs(th) (Maximum) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Maximum) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 6000pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 120W (Tc) Rds On (Maximum) @ Id, Vgs: 90 mOhm @ 23A, 10V Alternative Parts (Cross-Reference): STW36NM60ND; NTHL095N65S3HF; STW35N65DM2; IXKH30N60C5; ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Balance

Manufacturer: Rohm Semiconductor
Win Source Part Number: 793007-R6046ANZ1C9
Packaging: Bulk
Mounting Style: Through Hole
Operating Temperature Range: 150°C (TJ)
Package: TO-247-3
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Family Name: R6046ANZ1
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: TO-247
Channel Type Type: N
Drain Source Voltage: 600V
Vgs(th) (Maximum) @ Id: 4.5V @ 1mA
Gate Charge (Qg) (Maximum) @ Vgs: 150nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 6000pF @ 25V
Vgs (Maximum): ±30V
Power Dissipation (Maximum): 120W (Tc)
Rds On (Maximum) @ Id, Vgs: 90 mOhm @ 23A, 10V
Alternative Parts (Cross-Reference): STW36NM60ND; NTHL095N65S3HF; STW35N65DM2; IXKH30N60C5;
ECCN: EAR99
Estimated EOL Date: Obsolete / End of life
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Balance

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - R6046ANZ1C9 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
R6046ANZ1C9
Discrete Semiconductor Products - Transistors - FETs, MOSFETs R6046ANZ1C9
MOSFET N-CH 600V 46A TO247

MOSFET N-CH 600V 46A TO247

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 10V Drive Nch MOSFET

MOSFET 10V Drive Nch MOSFET

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number R6046ANZ1C9-ND 793007-R6046ANZ1C9 R6046ANZ1C9 R6046ANZ1C9
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - R6046ANZ1C9 Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel
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