RF4E110GN is an N-channel 30V MOSFET designed for switching applications, housed in a DFN2020-8S package measuring 2.0mm × 2.0mm with a height of 0.65mm. It has a maximum continuous drain current of ±11A and a maximum on-resistance of 11.3mΩ at V GS=10V and I D=11A. The device supports a peak pulsed drain current of ±44A and has a power dissipation limit of 2.0W. It is RoHS compliant, halogen free, and 100% Rg and UIS tested. The junction temperature range is -55°C to +150°C, with a thermal resistance of 62.5°C/W mounted on a 40×40×0.8mm Cu board. It is supplied in tape-and-reel packaging of 3000 pieces per reel. The part meets AEC-Q200 qualification and IEC 60286-3 standards.
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Manufacturer: Rohm Semiconductor
Win Source Part Number: 733776-RF4E110GN
Manufacturer Homepage: www.rohm.com
Reference case: QFN
Reference Date Code: 1316+
Popularity: Low
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Balance
Product overview: RF4E110GN from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-RF4E110GN can be used for catalog matching and distributor lookup.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | RF4E110GN | RF4E110GN | 733776-RF4E110GN | 285-RF4E110GN |
| Product Name | 4.5V Drive Nch MOSFET | 4.5V Drive Nch MOSFET | TRANSISTORS - Transistors - FETs, MOSFETs - RF - RF4E110GN | MOSFET Transistor |
| Polarity | N-Channel | N-Channel | ||
| V(BR)DSS | 30 volts | 30 volts | ||
| IDSS | 11000 milliamps | 11000 milliamps | ||
| PD | 2000 milliwatts | 2000 milliwatts |
