Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Manufacturer: Rohm Semiconductor
Win Source Part Number: 733776-RF4E110GN
Manufacturer Homepage: www.rohm.com
Reference case: QFN
Reference Date Code: 1316+
Popularity: Low
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Balance
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | Win Source Electronics | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors |
| Product Number | RF4E110GN | RF4E110GN | 733776-RF4E110GN |
| Product Name | 4.5V Drive Nch MOSFET | 4.5V Drive Nch MOSFET | TRANSISTORS - Transistors - FETs, MOSFETs - RF - RF4E110GN |
| Polarity | N-Channel | N-Channel | |
| V(BR)DSS | 30 volts | 30 volts | |
| IDSS | 11000 milliamps | 11000 milliamps | |
| PD | 2000 milliwatts | 2000 milliwatts |
