ROHM Semiconductor USA, LLC 10V Drive Nch Power MOSFET RCX081N20

N-Channel 200V 8A (Tc) 2.23W (Ta), 40W (Tc) Through Hole TO-220FM

MOSFET N-CH 200V 8A TO220FM Product overview: RCX081N20 from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-RCX081N20 can be used for catalog matching and distributor lookup.

Manufacturer: Rohm Semiconductor
Win Source Part Number: 1091659-RCX081N20
Packaging: Bulk
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.23W (Ta), 40W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220FM
Dimension: TO-220-2 Full Pack
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 8A (Tc)
Gate-Source Threshold Voltage: 5.25V @ 1mA
Max Gate Charge: 8.5nC @ 10V
Max Input Capacitance: 330pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 770 mOhm @ 4A, 10V
Alternative Parts (Cross-Reference): FQPF4N20L; SiHF610; IRF610;
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Balance