Manufacturer: Rohm Semiconductor
Win Source Part Number: 1091678-RDN150N20FU6
Packaging: Bulk
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 40W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Not For New Designs
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220FN
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 15A (Ta)
Gate-Source Threshold Voltage: 4V @ 1mA
Max Gate Charge: 64nC @ 10V
Max Input Capacitance: 1224pF @ 10V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 160 mOhm @ 7.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Balance
N-Channel 200V 15A (Ta) 40W (Tc) Through Hole TO-220FN
MOSFET N-CH 200V 15A TO220FN
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | 1091678-RDN150N20FU6 | RDN150N20FU6-ND | RDN150N20FU6 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - RDN150N20FU6 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | |
| V(BR)DSS | 200 volts | ||
| PD | 40000 milliwatts |
