ROHM Semiconductor USA, LLC TRANSISTORS - Transistors - FETs, MOSFETs - RF - RF4E080BNTR RF4E080BNTR

Manufacturer: Rohm Semiconductor
Win Source Part Number: 128800-RF4E080BNTR
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2W (Ta)
Family Name: RF4E080BN
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 6-HUML2020L8 (2x2)
Dimension: 8-PowerUDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 8A (Ta)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 14.5nC @ 10V
Max Input Capacitance: 660pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 17.6 mOhm @ 8A, 10V
Alternative Parts (Cross-Reference): RF4E080BNTR1;
Introduction Date: April 17, 2013
ECCN: EAR99
Estimated EOL Date: 2031
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Balance

MOSFET N-CH 30V 8A HUML2020L8

N-Channel 30V 8A (Ta) 2W (Ta) Surface Mount HUML2020L8

N-Channel 30V 8A (Ta) 2W (Ta) Surface Mount HUML2020L8

N-Channel 30V 8A (Ta) 2W (Ta) Surface Mount HUML2020L8