Win Source Part Number: 1354456-RD3L08BGNTL
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Temperature Range - Operating: 150°C (TJ)
Fake Threat In the Open Market: 52 pct.
MSL Level: 1 (Unlimited)
Mfr: Rohm Semiconductor
Package: Tape & Reel
Product Status: Active
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252
Base Product Number: RD3L08
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 80A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3620 pF @ 30 V
Power Dissipation (Max): 119W (Tc)
Mounting Type: Surface Mount
HTSUS: 8541.29.0095
REACH Status: REACH Unaffected
ECCN: EAR99
N-Channel 60V 80A (Tc) 119W (Tc) Surface Mount TO-252
N-Channel 60V 80A (Tc) 119W (Tc) Surface Mount TO-252
MOSFET, N-CH, 60V, 80A, 150DEG C, 119W ROHS COMPLIANT: YES
MOSFET N-CH 60V 80A TO252
| Win Source Electronics | DigiKey | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Acme Chip Technology Co., Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1354456-RD3L08BGNTL | RD3L08BGNTLCT-ND | 29AK4613 | RD3L08BGNTL | RD3L08BGNTL |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, N-Ch, 60V, 80A, 150Deg C, 119W Rohs Compliant Rohm | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel |
