MOSFET N-CH 200V 5A TO252 Product overview: RD3T050CNTL1 from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 5A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 5A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-RD3T050CNTL1 can be used for catalog matching and distributor lookup.
N-Channel 200V 5A (Tc) 29W (Tc) Surface Mount TO-252
N-Channel 200V 5A (Tc) 29W (Tc) Surface Mount TO-252
N-Channel 200V 5A (Tc) 29W (Tc) Surface Mount TO-252
Manufacturer: Rohm Semiconductor
Win Source Part Number: 1325267-RD3T050CNTL1
Category: Discrete Semiconductor Products>Transistors
Packaging: Reel - TR
Standard Package: 2,500
Mounting: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 760mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id: 5.25V @ 1mA
Power Dissipation (Max): 29W (Tc)
Supplier Device Package: TO-252
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: TO-252-3, DPak (2 Leads + Tab), SC-63
ECCN: EAR99
Fake Threat In the Open Market: 79
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: RD3T050CNTL1DKR,RD3T
Base Product Number: RD3T050
Drive Voltage (Max Rds On, Min Rds On): 10V
RoHS Status: ROHS3 Compliant
MOSFET N-CH 200V 5A TO252
MOSFET N-CH 200V 5A TO252
MOSFET, N-CH, 200V, 5A, 150DEG C, 29W; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.54ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5.25V; Power RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-RD3T050CNTL1 | RD3T050CNTL1TR-ND | 1325267-RD3T050CNTL1 | RD3T050CNTL1 | RD3T050CNTL1 | 23AH3416 |
| Product Name | 200V 5A TO252 MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, N-Ch, 200V, 5A, 150Deg C, 29W; Transistor Polarity Rohm |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||
| MOSFET Operating Mode | Enhancement | |||||
| Transconductance | 0.0013 kS | |||||
| PD | 29 milliwatts | 29000 milliwatts | 29000 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
