MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobile equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market.
MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market.
2.5V DRIVE NCH MOSFET Product overview: RE1L002SN from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 2.5V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 2.5V, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-RE1L002SN can be used for catalog matching and distributor lookup.
Manufacturer: Rohm Semiconductor
Win Source Part Number: 292620-RE1L002SN
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 150W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: EMT3F (SOT-416FL)
Dimension: SC-89, SOT-490
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 250mA (Ta)
Gate-Source Threshold Voltage: 2.3V @ 1mA
Max Input Capacitance: 15pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2.4 Ohm @ 250mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Balance
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | RE1L002SN | RE1L002SN | 285-RE1L002SN | 292620-RE1L002SN |
| Product Name | 2.5V Drive Nch MOSFET | 2.5V Drive Nch MOSFET | 2.5V MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - RE1L002SN |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel |
| V(BR)DSS | 60 volts | 60 volts | 60 volts | |
| IDSS | 250 milliamps | 250 milliamps | ||
| PD | 200 milliwatts | 200 milliwatts | 150000 milliwatts | 150000 milliwatts |
