ROHM Semiconductor USA, LLC TRANSISTORS - Transistors - FETs, MOSFETs - RF - RDN050N20 RDN050N20

Manufacturer: Rohm Semiconductor Win Source Part Number: 042306-RDN050N20 Packaging: Bulk Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 30W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Not For New Designs Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220FN Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 5A (Ta) Gate-Source Threshold Voltage: 4V @ 1mA Max Gate Charge: 18.6nC @ 10V Max Input Capacitance: 292pF @ 10V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 720 mOhm @ 2.5A, 10V Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Balance