RF4E080GN is an N-channel 30V MOSFET in a DFN2020-8S package designed for switching applications. It has a maximum continuous drain current of ±8A and a maximum on-resistance of 17.6mΩ at 10V gate drives. The device dissipates up to 2W and operates from -55°C to 150°C junction temperature. It is RoHS compliant, halogen-free, and has been 100% Rg and UIS tested. Thermal resistance from junction to ambient is 62.5°C/W when mounted on a 40×40×0.8mm copper board.
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | RF4E080GN | RF4E080GN |
| Product Name | 4.5V Drive Nch MOSFET | 4.5V Drive Nch MOSFET |
| Polarity | N-Channel | N-Channel |
| V(BR)DSS | 30 volts | 30 volts |
| IDSS | 8000 milliamps | 8000 milliamps |
| PD | 2000 milliwatts | 2000 milliwatts |
