N-Channel 30V 11A (Ta) 2W (Ta) Surface Mount HUML2020L8
N-Channel 30V 11A (Ta) 2W (Ta) Surface Mount HUML2020L8
N-Channel 30V 11A (Ta) 2W (Ta) Surface Mount HUML2020L8
MOSFET N-CH 30V 11A HUML2020L8
Manufacturer: Rohm Semiconductor
Win Source Part Number: 1092114-RF4E110GNTR
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 6-HUML2020L8 (2x2)
Dimension: 8-PowerUDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 11A (Ta)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 7.4nC @ 10V
Max Input Capacitance: 504pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 11.3 mOhm @ 11A, 10V
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Balance
(PRICE/TC) MOSFET, N-CH, 30V, 11A, HUML2020, TRANSISTOR POLARITY:N CHANNEL, CONTINUOUS DRAIN CURRENT ID:11A, DRAIN SOURCE VOLTAGE VDS:30V, ON RESISTANCE RDS(ON):0.0087OHM, RDS(ON) TEST VOLTAGE VGS:10V, THRESHOLD VOLTAGE VGS:2.5V, POWER ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
MOSFET N-CH 30V 11A 8-HUML
MOSFET, N-CH, 30V, 11A, HUML2020; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0087ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power RoHS Compliant: Yes
MOSFET N-CH 30V 11A HUML2020L8
| DigiKey | ODG (Origin Data Global) | Win Source Electronics | Radwell International | Utmel Electronic Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | RF4E110GNTRCT-ND | RF4E110GNTR | 1092114-RF4E110GNTR | 136778412 | 687-RF4E110GNTR | 10AC8656 | RF4E110GNTR | RF4E110GNTR |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - RF4E110GNTR | Transistor | MOSFET N-CH 30V 11A 8-HUML | Mosfet, N-Ch, 30V, 11A, Huml2020; Transistor Polarity Rohm | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | |||||
| Package Type | 8-PowerUDFN | 8-PowerUDFN | SOT3; 6-HUML2020L8 (2x2) | TO-3 | 8-PowerUDFN | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | SILICON | ||||||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | |||||
| IDSS | 11000 milliamps | 11000 milliamps |
