N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
PMF170XP - 20 V, 1 A P-channel Trench MOSFET SC-70 3-Pin Product overview: PMF170XP,115 from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 20 V, 1 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20 V, 1 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PMF170XP,115 can be used for catalog matching and distributor lookup.
P-Channel 20V 1A (Ta) 290mW (Ta), 1.67W (Tc) Surface Mount SOT-323
P-Channel 20V 1A (Ta) 290mW (Ta), 1.67W (Tc) Surface Mount SOT-323
P-Channel 20V 1A (Ta) 290mW (Ta), 1.67W (Tc) Surface Mount SOT-323
Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1089658-PMF170XP,115
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 290mW (Ta), 1.67W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-323-3
Dimension: SC-70, SOT-323
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 1A (Ta)
Gate-Source Threshold Voltage: 1.15V @ 250μA
Max Gate Charge: 3.9nC @ 4.5V
Max Input Capacitance: 280pF @ 10V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 200 mOhm @ 1A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Limited
20V 1A 200mΩ@4.5V,1A 1.15V@250uA P Channel SOT-323-3 MOSFETs ROHS
MOSFET P-CH 20V 1A SOT323
MOSFET, P CHANNEL, 20V, 1A, SOT323; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:1A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:900mV RoHS Compliant: Yes
MOSFET P-CH 20V 1A SOT323
| Nexperia B.V. | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | LCSC Electronics Technology (HK) Limited | ODG (Origin Data Global) | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | PMF170XP,115 | 278-PMF170XP,115 | 1727-1229-6-ND | 1089658-PMF170XP,115 | PMF170XP,115 | PMF170XP,115 | 75T8013 | PMF170XP,115 |
| Product Name | 60 V, single N-channel Trench MOSFET | P-Channel 20 V 1 A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMF170XP,115 | Triode/MOS Tube/Transistor >> MOSFETs | Single FETs, MOSFETs | Mosfet, P Channel, 20V, 1A, Sot323; Channel Type Nexperia | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| MOSFET Operating Mode | Enhancement | |||||||
| V(BR)DSS | -20 volts | 20 volts | 20 volts | 20 volts | ||||
| IDSS | -1000 milliamps | 1000 milliamps | 1000 milliamps | |||||
| VGS(off) | 12 volts | 1.15 volts | ||||||
| PD | 290 milliwatts | 290 to 1670 milliwatts | 290 milliwatts | 290 milliwatts |
