Nexperia B.V. 20 V, dual P-channel Trench MOSFET PMDXB590UPEZ

Description
Dual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection typically > 2 kV HBM Applications Relay driver High-speed line driver High-side load switch Switching circuits
  • 20 V, dual P-channel Trench MOSFET - PMDXB590UPEZ - Nexperia B.V.
    Nexperia B.V.
  • FET, MOSFET Arrays - 1727-PMDXB590UPEZCT-ND - DigiKey
    DigiKey
  • FET, MOSFET Arrays - 1727-PMDXB590UPEZDKR-ND - DigiKey
    DigiKey
  • FET, MOSFET Arrays - 1727-PMDXB590UPEZTR-ND - DigiKey
    DigiKey
Request a Quote Datasheet
Description
Dual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection typically > 2 kV HBM Applications Relay driver High-speed line driver High-side load switch Switching circuits
Request a Quote Datasheet

Suppliers

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Supplier Links
20 V, dual P-channel Trench MOSFET - PMDXB590UPEZ - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
20 V, dual P-channel Trench MOSFET
PMDXB590UPEZ
20 V, dual P-channel Trench MOSFET PMDXB590UPEZ
Dual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection typically > 2 kV HBM Applications Relay driver High-speed line driver High-side load switch Switching circuits

Dual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

  • Low threshold voltage
  • Very fast switching
  • Trench MOSFET technology
  • ElectroStatic Discharge (ESD) protection typically > 2 kV HBM

Applications

  • Relay driver
  • High-speed line driver
  • High-side load switch
  • Switching circuits
Supplier's Site Datasheet
FET, MOSFET Arrays - 1727-PMDXB590UPEZCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
1727-PMDXB590UPEZCT-ND
FET, MOSFET Arrays 1727-PMDXB590UPEZCT-ND
MOSFET 2P-CH 20V 0.57A 6DFN

MOSFET 2P-CH 20V 0.57A 6DFN

Buy Now Datasheet
FET, MOSFET Arrays - 1727-PMDXB590UPEZDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
1727-PMDXB590UPEZDKR-ND
FET, MOSFET Arrays 1727-PMDXB590UPEZDKR-ND
MOSFET 2P-CH 20V 0.57A 6DFN

MOSFET 2P-CH 20V 0.57A 6DFN

Buy Now Datasheet
FET, MOSFET Arrays - 1727-PMDXB590UPEZTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
1727-PMDXB590UPEZTR-ND
FET, MOSFET Arrays 1727-PMDXB590UPEZTR-ND
MOSFET 2P-CH 20V 0.57A 6DFN

MOSFET 2P-CH 20V 0.57A 6DFN

Buy Now Datasheet

Technical Specifications

  Nexperia B.V. DigiKey
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors
Product Number PMDXB590UPEZ 1727-PMDXB590UPEZCT-ND
Product Name 20 V, dual P-channel Trench MOSFET FET, MOSFET Arrays
Polarity P-Channel
MOSFET Operating Mode Enhancement
V(BR)DSS -20 volts
IDSS -2300 milliamps
VGS(off) -0.7000 volts
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