PNP high power bipolar transistor in a SOT669 (LFPAK56) surface-mounted plastic package, rated for a collector-emitter voltage of -60 V and a continuous collector current of -6 A. Peak collector current is -12 A for pulses up to 1 ms. Collector-emitter saturation resistance is 66 to 88 mΩ at -6 A collector current and -600 mA base current. Junction temperature operates up to 175 °C, with ambient temperature range from -55 °C to 175 °C. Thermal resistance from junction to mounting base is 6 K/W. Qualified to AEC-Q101 for automotive applications.
PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.
NPN complement: PHPT60606NY-Q
Features and benefits
Applications
| Nexperia B.V. | |
|---|---|
| Product Category | Power Bipolar Transistors |
| Product Number | PHPT60606PY-QX |
| Product Name | 60 V, 6 A PNP high power bipolar transistor |
| VCEO | -60 volts |
