Nexperia B.V. 20 V, P-channel Trench MOSFET PMN30XPEAX

Description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Extended temperature range Tj = 175 °C Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 1 kV HBM (class H1C) AEC-Q101 qualified Applications Relay driver High-speed line driver High-side loadswitch Switching circuits
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Description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Extended temperature range Tj = 175 °C Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 1 kV HBM (class H1C) AEC-Q101 qualified Applications Relay driver High-speed line driver High-side loadswitch Switching circuits
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
20 V, P-channel Trench MOSFET - PMN30XPEAX - Nexperia B.V.
Nijmegen, Netherlands
20 V, P-channel Trench MOSFET
PMN30XPEAX
20 V, P-channel Trench MOSFET PMN30XPEAX
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Extended temperature range Tj = 175 °C Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 1 kV HBM (class H1C) AEC-Q101 qualified Applications Relay driver High-speed line driver High-side loadswitch Switching circuits

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

  • Low threshold voltage
  • Extended temperature range Tj = 175 °C
  • Very fast switching
  • Trench MOSFET technology
  • ElectroStatic Discharge (ESD) protection > 1 kV HBM (class H1C)
  • AEC-Q101 qualified

Applications

  • Relay driver
  • High-speed line driver
  • High-side loadswitch
  • Switching circuits
Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 969606-PMN30XPEAX - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
969606-PMN30XPEAX
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 969606-PMN30XPEAX
Win Source Part Number: 969606-PMN30XPEAX Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: Automotive, AEC-Q101, TrenchMOS™ Package: Tape & Reel (TR) Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta) Rds On (Max) @ Id, Vgs: 33mOhm @ 5.4A, 8V Vgs(th) (Max) @ Id: 1.3V @ 250µA Power Dissipation (Max): 660mW (Ta), 7.5W (Tc) Package / Case: SC-74, SOT-457 Supplier Device Package: 6-TSOP Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1025 pF @ 10 V Vgs (Max): ±12V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 81 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Nexperia USA Inc. Other Names: 1727-PMN30XPEAXDKR,1 727-PMN30XPEAXCT,934 069661115,1727-PMN30 XPEAXTR Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V

Win Source Part Number: 969606-PMN30XPEAX
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: Automotive, AEC-Q101, TrenchMOS™
Package: Tape & Reel (TR)
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 5.4A, 8V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Power Dissipation (Max): 660mW (Ta), 7.5W (Tc)
Package / Case: SC-74, SOT-457
Supplier Device Package: 6-TSOP
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1025 pF @ 10 V
Vgs (Max): ±12V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 81 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Nexperia USA Inc.
Other Names: 1727-PMN30XPEAXDKR,1727-PMN30XPEAXCT,934069661115,1727-PMN30XPEAXTR
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V

Buy Now Datasheet
Single FETs, MOSFETs - 1727-PMN30XPEAXTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PMN30XPEAXTR-ND
Single FETs, MOSFETs 1727-PMN30XPEAXTR-ND
SMALL SIGNAL MOSFET FOR AUTOMOTI

SMALL SIGNAL MOSFET FOR AUTOMOTI

Buy Now Datasheet
Mosfet, Aec-Q101, P-Ch, 20V, Sc-74 Rohs Compliant Nexperia - 82AH4929 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Aec-Q101, P-Ch, 20V, Sc-74 Rohs Compliant Nexperia
82AH4929
Mosfet, Aec-Q101, P-Ch, 20V, Sc-74 Rohs Compliant Nexperia 82AH4929
MOSFET, AEC-Q101, P-CH, 20V, SC-74 ROHS COMPLIANT: YES

MOSFET, AEC-Q101, P-CH, 20V, SC-74 ROHS COMPLIANT: YES

Supplier's Site Datasheet

Technical Specifications

  Nexperia B.V. Win Source Electronics DigiKey Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number PMN30XPEAX 969606-PMN30XPEAX 1727-PMN30XPEAXTR-ND 82AH4929
Product Name 20 V, P-channel Trench MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs Mosfet, Aec-Q101, P-Ch, 20V, Sc-74 Rohs Compliant Nexperia
Polarity P-Channel P-Channel P-Channel
MOSFET Operating Mode Enhancement
V(BR)DSS -20 volts
IDSS -5300 milliamps
VGS(off) -1 volts
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