P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) surface-mounted plastic package using Trench MOSFET technology, rated for a drain-source voltage of -20 V and a maximum junction temperature of 175 °C. It features a low gate-source threshold voltage, very fast switching, ESD protection exceeding 1 kV HBM (class H1C), and is AEC-Q101 qualified for automotive applications. The device supports continuous drain currents up to -5.4 A at ambient temperature of 25 °C with a drain-source on-state resistance of 30 to 38 mΩ at V_GS = -4.5 V. The package dimensions follow the SOT457 standard with a footprint designed for reflow and wave soldering.
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
Win Source Part Number: 969606-PMN30XPEAX
Category: Discrete Semiconductor Products>Transistors
Series: Automotive, AEC-Q101, TrenchMOS™
Package: Tape & Reel (TR)
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 5.4A, 8V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Power Dissipation (Max): 660mW (Ta), 7.5W (Tc)
Package / Case: SC-74, SOT-457
Supplier Device Package: 6-TSOP
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1025 pF @ 10 V
Vgs (Max): ±12V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 81 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Nexperia USA Inc.
Other Names: 1727-PMN30XPEAXDKR,1
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V
SMALL SIGNAL MOSFET FOR AUTOMOTI
MOSFET, AEC-Q101, P-CH, 20V, SC-74 ROHS COMPLIANT: YES
| Nexperia B.V. | Win Source Electronics | DigiKey | Newark, An Avnet Company | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | PMN30XPEAX | 969606-PMN30XPEAX | 1727-PMN30XPEAXTR-ND | 82AH4929 |
| Product Name | 20 V, P-channel Trench MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Mosfet, Aec-Q101, P-Ch, 20V, Sc-74 Rohs Compliant Nexperia |
| MOSFET Operating Mode | Enhancement | |||
| V(BR)DSS | -20 volts | |||
| IDSS | -5400 milliamps | |||
| VGS(off) | 12 volts | |||
| PD | 660 milliwatts | 660 to 7500 milliwatts |
