Nexperia B.V. 20 V, dual N-channel Trench MOSFET PMDPB30XNAX

Description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm Exposed drain pad for excellent thermal conduction AEC-Q101 qualified Applications DC to DC conversion High-speed line driver Low-side load switch Switching circuits
  • 20 V, dual N-channel Trench MOSFET - PMDPB30XNAX - Nexperia B.V.
    Nexperia B.V.
  • FET, MOSFET Arrays - 1727-PMDPB30XNAXTR-ND - DigiKey
    DigiKey
  • FET, MOSFET Arrays - 1727-PMDPB30XNAXDKR-ND - DigiKey
    DigiKey
  • FET, MOSFET Arrays - 1727-PMDPB30XNAXCT-ND - DigiKey
    DigiKey
Request a Quote Datasheet
Description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm Exposed drain pad for excellent thermal conduction AEC-Q101 qualified Applications DC to DC conversion High-speed line driver Low-side load switch Switching circuits
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
20 V, dual N-channel Trench MOSFET - PMDPB30XNAX - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
20 V, dual N-channel Trench MOSFET
PMDPB30XNAX
20 V, dual N-channel Trench MOSFET PMDPB30XNAX
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm Exposed drain pad for excellent thermal conduction AEC-Q101 qualified Applications DC to DC conversion High-speed line driver Low-side load switch Switching circuits

Dual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

  • Low threshold voltage
  • Very fast switching
  • Trench MOSFET technology
  • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
  • Exposed drain pad for excellent thermal conduction
  • AEC-Q101 qualified

Applications

  • DC to DC conversion
  • High-speed line driver
  • Low-side load switch
  • Switching circuits
Supplier's Site Datasheet
FET, MOSFET Arrays - 1727-PMDPB30XNAXTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
1727-PMDPB30XNAXTR-ND
FET, MOSFET Arrays 1727-PMDPB30XNAXTR-ND
MOSFET 2N-CH 20V 4.5A 6HUSON

MOSFET 2N-CH 20V 4.5A 6HUSON

Buy Now Datasheet
FET, MOSFET Arrays - 1727-PMDPB30XNAXDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
1727-PMDPB30XNAXDKR-ND
FET, MOSFET Arrays 1727-PMDPB30XNAXDKR-ND
MOSFET 2N-CH 20V 4.5A 6HUSON

MOSFET 2N-CH 20V 4.5A 6HUSON

Buy Now Datasheet
FET, MOSFET Arrays - 1727-PMDPB30XNAXCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
1727-PMDPB30XNAXCT-ND
FET, MOSFET Arrays 1727-PMDPB30XNAXCT-ND
MOSFET 2N-CH 20V 4.5A 6HUSON

MOSFET 2N-CH 20V 4.5A 6HUSON

Buy Now Datasheet

Technical Specifications

  Nexperia B.V. DigiKey
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors
Product Number PMDPB30XNAX 1727-PMDPB30XNAXTR-ND
Product Name 20 V, dual N-channel Trench MOSFET FET, MOSFET Arrays
MOSFET Operating Mode Enhancement
V(BR)DSS 20 volts
IDSS 4500 milliamps
VGS(off) 10 volts
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