Nexperia B.V. 30 V, N-channel Trench MOSFET PMH550UNEH

Description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM Leadless ultra small and ultra thin SMD plastic package: 0.62 x 0.62 x 0.37 mm Applications Relay driver High-speed line driver Low-side load switch Switching circuits
Request a Quote Datasheet
Description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM Leadless ultra small and ultra thin SMD plastic package: 0.62 x 0.62 x 0.37 mm Applications Relay driver High-speed line driver Low-side load switch Switching circuits
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
30 V, N-channel Trench MOSFET - PMH550UNEH - Nexperia B.V.
Nijmegen, Netherlands
30 V, N-channel Trench MOSFET
PMH550UNEH
30 V, N-channel Trench MOSFET PMH550UNEH
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM Leadless ultra small and ultra thin SMD plastic package: 0.62 x 0.62 x 0.37 mm Applications Relay driver High-speed line driver Low-side load switch Switching circuits

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

  • Low threshold voltage
  • Very fast switching
  • Trench MOSFET technology
  • ElectroStatic Discharge (ESD) protection > 2 kV HBM
  • Leadless ultra small and ultra thin SMD plastic package: 0.62 x 0.62 x 0.37 mm

Applications

  • Relay driver
  • High-speed line driver
  • Low-side load switch
  • Switching circuits
Supplier's Site Datasheet
Single FETs, MOSFETs - PMH550UNEH - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
PMH550UNEH
Single FETs, MOSFETs PMH550UNEH
MOSFET N-CH 30V 770MA DFN0606-3

MOSFET N-CH 30V 770MA DFN0606-3

Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-8579-6-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-8579-6-ND
Single FETs, MOSFETs 1727-8579-6-ND
N-Channel 30V 770mA (Ta) 380mW (Ta), 2.8W (Tc) Surface Mount DFN0606-3

N-Channel 30V 770mA (Ta) 380mW (Ta), 2.8W (Tc) Surface Mount DFN0606-3

Buy Now Datasheet
Single FETs, MOSFETs - 1727-8579-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-8579-2-ND
Single FETs, MOSFETs 1727-8579-2-ND
N-Channel 30V 770mA (Ta) 380mW (Ta), 2.8W (Tc) Surface Mount DFN0606-3

N-Channel 30V 770mA (Ta) 380mW (Ta), 2.8W (Tc) Surface Mount DFN0606-3

Buy Now Datasheet
Single FETs, MOSFETs - 1727-8579-1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-8579-1-ND
Single FETs, MOSFETs 1727-8579-1-ND
N-Channel 30V 770mA (Ta) 380mW (Ta), 2.8W (Tc) Surface Mount DFN0606-3

N-Channel 30V 770mA (Ta) 380mW (Ta), 2.8W (Tc) Surface Mount DFN0606-3

Buy Now Datasheet
Mosfet, N-Ch, 30V, 0.77A, Dfn0606; Transistor Polarity Nexperia - 99AC9464 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 30V, 0.77A, Dfn0606; Transistor Polarity Nexperia
99AC9464
Mosfet, N-Ch, 30V, 0.77A, Dfn0606; Transistor Polarity Nexperia 99AC9464
MOSFET, N-CH, 30V, 0.77A, DFN0606; Transistor Polarity:N Channel; Continuous Drain Current Id:770mA; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.55ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:700mV; Power RoHS Compliant: Yes

MOSFET, N-CH, 30V, 0.77A, DFN0606; Transistor Polarity:N Channel; Continuous Drain Current Id:770mA; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.55ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:700mV; Power RoHS Compliant: Yes

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET 30 V, N-channel Trench MOSFET

MOSFET 30 V, N-channel Trench MOSFET

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PMH550UNEH - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PMH550UNEH
Discrete Semiconductor Products - Transistors - FETs, MOSFETs PMH550UNEH
MOSFET N-CH 30V 770MA DFN0606-3

MOSFET N-CH 30V 770MA DFN0606-3

Supplier's Site

Technical Specifications

  Nexperia B.V. ODG (Origin Data Global) DigiKey Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number PMH550UNEH PMH550UNEH 1727-8579-6-ND 99AC9464 PMH550UNEH PMH550UNEH
Product Name 30 V, N-channel Trench MOSFET Single FETs, MOSFETs Single FETs, MOSFETs Mosfet, N-Ch, 30V, 0.77A, Dfn0606; Transistor Polarity Nexperia MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel
MOSFET Operating Mode Enhancement
V(BR)DSS 30 volts 30 volts
IDSS 770 milliamps 770 milliamps 770 milliamps
VGS(off) 0.7000 volts
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