Nexperia B.V. 30 V, N-channel Trench MOSFET PMH550UNEH

Description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM Leadless ultra small and ultra thin SMD plastic package: 0.62 x 0.62 x 0.37 mm Applications Relay driver High-speed line driver Low-side load switch Switching circuits
  • 30 V, N-channel Trench MOSFET - PMH550UNEH - Nexperia B.V.
    Nexperia B.V.
  • Single FETs, MOSFETs - 1727-PMH550UNEHCT-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-PMH550UNEHDKR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-PMH550UNEHTR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - PMH550UNEH - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PMH550UNEH - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N-Ch, 30V, 0.77A, Dfn0606; Transistor Polarity Nexperia - 99AC9464 - Newark, An Avnet Company
    Newark, An Avnet Company
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Description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM Leadless ultra small and ultra thin SMD plastic package: 0.62 x 0.62 x 0.37 mm Applications Relay driver High-speed line driver Low-side load switch Switching circuits
Request a Quote
Datasheet
Datasheet Summary
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30 V, N-channel Trench MOSFET in a leadless ultra small DFN0606-3 (SOT8001) surface-mounted package measuring 0.62 x 0.62 x 0.37 mm, designed for low-side load switching and high-speed applications. It features a drain-source on-state resistance of 550 to 670 mΩ at 4.5 V gate voltage and 770 mA drain current, a gate-source threshold voltage of 0.45 to 0.95 V, and electrostatic discharge protection exceeding 2 kV HBM. The device supports a maximum drain current of 770 mA at 25 °C and a junction temperature range of -55 °C to 150 °C.

Datasheet Summary
Powered by GS/AI

30 V, N-channel Trench MOSFET in a leadless ultra small DFN0606-3 (SOT8001) surface-mounted package measuring 0.62 x 0.62 x 0.37 mm, designed for low-side load switching and high-speed applications. It features a drain-source on-state resistance of 550 to 670 mΩ at 4.5 V gate voltage and 770 mA drain current, a gate-source threshold voltage of 0.45 to 0.95 V, and electrostatic discharge protection exceeding 2 kV HBM. The device supports a maximum drain current of 770 mA at 25 °C and a junction temperature range of -55 °C to 150 °C.

Suppliers

Company
Product
Description
Supplier Links
30 V, N-channel Trench MOSFET - PMH550UNEH - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
30 V, N-channel Trench MOSFET
PMH550UNEH
30 V, N-channel Trench MOSFET PMH550UNEH
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM Leadless ultra small and ultra thin SMD plastic package: 0.62 x 0.62 x 0.37 mm Applications Relay driver High-speed line driver Low-side load switch Switching circuits

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

  • Low threshold voltage
  • Very fast switching
  • Trench MOSFET technology
  • ElectroStatic Discharge (ESD) protection > 2 kV HBM
  • Leadless ultra small and ultra thin SMD plastic package: 0.62 x 0.62 x 0.37 mm

Applications

  • Relay driver
  • High-speed line driver
  • Low-side load switch
  • Switching circuits
Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-PMH550UNEHCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PMH550UNEHCT-ND
Single FETs, MOSFETs 1727-PMH550UNEHCT-ND
N-Channel 30V 770mA (Ta) 380mW (Ta), 2.8W (Tc) Surface Mount DFN0606-3

N-Channel 30V 770mA (Ta) 380mW (Ta), 2.8W (Tc) Surface Mount DFN0606-3

Buy Now Datasheet
Single FETs, MOSFETs - 1727-PMH550UNEHDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PMH550UNEHDKR-ND
Single FETs, MOSFETs 1727-PMH550UNEHDKR-ND
N-Channel 30V 770mA (Ta) 380mW (Ta), 2.8W (Tc) Surface Mount DFN0606-3

N-Channel 30V 770mA (Ta) 380mW (Ta), 2.8W (Tc) Surface Mount DFN0606-3

Buy Now Datasheet
Single FETs, MOSFETs - 1727-PMH550UNEHTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PMH550UNEHTR-ND
Single FETs, MOSFETs 1727-PMH550UNEHTR-ND
N-Channel 30V 770mA (Ta) 380mW (Ta), 2.8W (Tc) Surface Mount DFN0606-3

N-Channel 30V 770mA (Ta) 380mW (Ta), 2.8W (Tc) Surface Mount DFN0606-3

Buy Now Datasheet
Single FETs, MOSFETs - PMH550UNEH - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
PMH550UNEH
Single FETs, MOSFETs PMH550UNEH
MOSFET N-CH 30V 770MA DFN0606-3

MOSFET N-CH 30V 770MA DFN0606-3

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PMH550UNEH - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PMH550UNEH
Discrete Semiconductor Products - Transistors - FETs, MOSFETs PMH550UNEH
MOSFET N-CH 30V 770MA DFN0606-3

MOSFET N-CH 30V 770MA DFN0606-3

Supplier's Site
Mosfet, N-Ch, 30V, 0.77A, Dfn0606; Transistor Polarity Nexperia - 99AC9464 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 30V, 0.77A, Dfn0606; Transistor Polarity Nexperia
99AC9464
Mosfet, N-Ch, 30V, 0.77A, Dfn0606; Transistor Polarity Nexperia 99AC9464
MOSFET, N-CH, 30V, 0.77A, DFN0606; Transistor Polarity:N Channel; Continuous Drain Current Id:770mA; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.55ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:700mV; Power RoHS Compliant: Yes

MOSFET, N-CH, 30V, 0.77A, DFN0606; Transistor Polarity:N Channel; Continuous Drain Current Id:770mA; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.55ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:700mV; Power RoHS Compliant: Yes

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
PMH550UNEH
MOSFET PMH550UNEH
MOSFET 30 V, N-channel Trench MOSFET

MOSFET 30 V, N-channel Trench MOSFET

Buy Now Datasheet

Technical Specifications

  Nexperia B.V. DigiKey ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number PMH550UNEH 1727-PMH550UNEHCT-ND PMH550UNEH PMH550UNEH 99AC9464 PMH550UNEH
Product Name 30 V, N-channel Trench MOSFET Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 30V, 0.77A, Dfn0606; Transistor Polarity Nexperia MOSFET
MOSFET Operating Mode Enhancement
V(BR)DSS 30 volts 30 volts
IDSS 770000 milliamps 770 milliamps 770 milliamps
VGS(off) 8 volts
PD 380 milliwatts 380 milliwatts
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