N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
MOSFET N-CH 30V 770MA DFN0606-3
N-Channel 30V 770mA (Ta) 380mW (Ta), 2.8W (Tc) Surface Mount DFN0606-3
N-Channel 30V 770mA (Ta) 380mW (Ta), 2.8W (Tc) Surface Mount DFN0606-3
N-Channel 30V 770mA (Ta) 380mW (Ta), 2.8W (Tc) Surface Mount DFN0606-3
MOSFET, N-CH, 30V, 0.77A, DFN0606; Transistor Polarity:N Channel; Continuous Drain Current Id:770mA; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.55ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:700mV; Power RoHS Compliant: Yes
MOSFET 30 V, N-channel Trench MOSFET
MOSFET N-CH 30V 770MA DFN0606-3
| Nexperia B.V. | ODG (Origin Data Global) | DigiKey | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | PMH550UNEH | PMH550UNEH | 1727-8579-6-ND | 99AC9464 | PMH550UNEH | PMH550UNEH |
| Product Name | 30 V, N-channel Trench MOSFET | Single FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, N-Ch, 30V, 0.77A, Dfn0606; Transistor Polarity Nexperia | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | |||
| MOSFET Operating Mode | Enhancement | |||||
| V(BR)DSS | 30 volts | 30 volts | ||||
| IDSS | 770 milliamps | 770 milliamps | 770 milliamps | |||
| VGS(off) | 0.7000 volts |